Principles of Electronic Materials and DevicesMcGraw-Hill, 2006 - 874페이지 "The third edition includes new topics and extended sections, such as diffusion, conduction in thin films, interconnects in microelectronics, electromigration, Stefan's radiation law, field emission from carbon nanotubes, piezoresistivity, amorphous semiconductors, solar cells, LEDs, Debye relaxation, giant magnetoresistance, magnetic data storage, Reststrahlen absorption, luminescence and white LEDs, and X-ray diffraction (Appendix). It also has a large number of new worked examples, numerous new homework problems, and many new illustrations and photographs. This text is one of the few books in the market that has the broad coverage of electronic materials and devices that today's scientists and engineers need."--Jacket. |
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alloy applied field atomic mass average bandgap Calculate capacitance capacitor charge circuit cm² cm³ coefficient collisions concentration conduction electrons conductor Consider constant covalent bond crystal structure density depends depicted in Figure depletion region dielectric diffraction diffusion diode dipole direct bandgap direction doped drift mobility effect electric field emission emitted emitter energy level Equation equilibrium example Fermi Fermi energy ferromagnetic frequency GaAs given heat capacity hence hole impurity increases ionic ionization ions lattice vibrations layer liquid magnetic field magnetic moment material mean free medium metal minority carrier molecules momentum n-side n-type n-type semiconductor n₁ negative optical orbital phase photon plane pn junction polarization potential energy quantum radiation recombination refractive index resistivity scattering semiconductor shown in Figure silicon solar cell solid spin subshells superconductors surface temperature thermal tion typically unit cell unit volume velocity voltage wave wavefunction wavelength zero