Dielectrics in Emerging Technologies: Proceedings of the International SymposiumThe Electrochemical Society, 2003 - 436페이지 "Papers presented at the First International Symposium on Science and Technology of Dielectrics in Emerging Fields, held from 27th April to 2nd May, 2003 in Paris, France"--Pref. |
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자주 나오는 단어 및 구문
absorption amorphous annealing Appl applications band capacitance carrier charge chemical chemical vapor deposition cm¹ CMOS coating crystal crystalline decrease defects density deposition rate devices dielectric constant diffusion effect electrical electron emission energy erbium oxide etch rate fabrication ferroelectric Figure film thickness films deposited flow frequency FTIR function GaN nanorods gate grain high-k hydrogen increase integrated interface layer ion track ISFET KOH etch laser Lett LPCVD material measurements membrane metal nanocrystals optical oxide oxygen p-n junction p-type parameters passivation peak PECVD permittivity phase photodiodes Phys piezoelectric plasma pm-Si:H polarization polymers potential precursor pressure properties pulse quantum ratio refractive index RF power samples sccm semiconductor sensor shown in Fig shows SiCOH silane silicon nitride SiO2 solar cell spectra structure substrate superlattices surface switching Ta₂Os technique temperature thermal thin films undoped voltage wafer waveguide wavelength Wavenumber ZnTiO3 ZrO2
인기 인용구
414 페이지 - This work was supported by the National Science Council of the Republic of China under Contract No.
96 페이지 - Si-SiO2 interfaces.88 (By reducing considerably the SiO2 thickness, epitaxial growth of the Si layers can be achieved.89) The fitted Eg of 1.60 eV is larger than that expected for c-Si (1.12 eV at 295 K), but is in excellent agreement with that of bulk a-Si (1.5-1.6 eV at 295 K). The indications of direct band-to-band recombination were confirmed by measurements via x-ray techniques of the conduction and valence band shifts with layer thickness.86'90 The fitted confinement parameter of 0.72 eV/nm...
97 페이지 - These calculations could not explain the experimental difference between absorption and PL in such superlattices (see Ref. 95 and references therein), but they did emphasize that both quantum confinement and adequate passivation of the Si layers are necessary in order to observe visible wavelength PL. The bright PL obtained from as-grown and annealed...
331 페이지 - This phenomenon can also be observed by a current dispersion between dc and pulsed test conditions or a degraded rf output power. The mechanisms include the presence of surface states on the cap layer or trapping centers in the resistive buffer underlying the active channel. The carriers in the 2-dimentional electron gas can be lost either to the surface or buffer traps (4,6,37).
92 페이지 - The porous material is created by electrochemical dissolution in HF-based electrolytes. Hydrofluoric acid, on its own, etches single-crystal Si extremely slowly, at a rate of only nanometers per hour. However, passing an electric current between the acid electrolyte and the Si sample speeds up the process considerably, leaving an array of deep narrow pores that generally run perpendicular to the Si surface. Pores measuring only nanometers across, but micrometers deep, have been achieved under specific...
99 페이지 - Rasper and F. Schaffler, in Strained-Layer Superlattices: Materials Science and Technology, edited by TP Pearsall (Academic Press, Boston, 1991), p. 223. 3. G. Abstreiter, Physics World 5 (3), 36 (1992). 4. BA Saleh and MC Teich, Fundamentals of Photonics (Wiley, New York, 1991).
100 페이지 - A. Halimaoui, C. Oules, G. Bomchil, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, and F. Muller, Appl. Phys. Lett. 59, 304 (1991).
97 페이지 - Ge v quantum dots, as these produce the strongest confinement effects for a given diameter or can achieve desired confinements with smaller diameters than for wires. A number of first principles calculations have been performed for H-passivated Si quantum dots (see Ref.
89 페이지 - ... and NASA space missions against which total launch vehicles costs could be calculated; and the value of the results of the study to NASA to confirm our judgment on the use of the SATURN IB for the APOLLO and VOYAGER missions. ". . . we are making extensive use of DOD-developed launch vehicles and will continue to do so for some time to come. However, a wider variety of first-stage boosters and upper stages is required by NASA space missions than by those of the DOD. We have requirements for a...
216 페이지 - A. Assion, T. Baumert, M. Bergt, T. Brixner, B. Kiefer, V. Seyfried, M. Strehle, and G. Gerber, "Control of chemical reactions by feedbackoptimized phase-shaped femtosecond laser pulses", Science 282, 919 ( 1998).